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| GaAs Schottky Devices TM (R) Low CT Flip Chip MS8151 - P2613 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance (45 fF Typ.) Low Series Resistance (7 Typ.) Cut-off Frequency > 500 GHz Large Gold Bond Pads Description The MS8151-P2613 is a GaAs flip chip Schottky diode designed for use as mixer and detector elements at microwave and millimeter wave frequencies. Their high cut-off frequency insures good performance at frequencies to 100 GHz. Applications include, transceivers, digital radios and automotive radar detectors. These flip chip devices incorporate Microsemi's expertise in GaAs material processing, silicon nitride protective coatings and high temperature metalization. They have large, 5 x 8 mil, bond pads for ease of insertion. The MS8150-P2613 is priced for high volume commercial and industrial applications. Specifications @ 25C (Per Junction) VF (1 mA): 600-800 mV RS (10 mA): 9 Max. IR (3 V): 10 A Max. CT (0 V): 60 fF Max. Maximum Ratings Insertion Temperature Incident Power Forward Current Reverse Voltage Operating Temperature Storage Temperature 250C for 10 Seconds +20 dBm @ 25C 15 mA @ 25C 3V -55C to +125C -65C to +150C IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. 1 The MS8151 is supplied with a RoHS complaint Gold finish. Copyright 2008 Rev.: 2009-01-19 Microsemi Microwave Products Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 GaAs Schottky Devices TM (R) Low CT Flip Chip MS8151 - P2613 P2613 DIM A B C D C CATHODE J D B E F G H J INCHES MIN. 0.0255 0.0125 0.0046 0.0075 0.0170 0.0050 0.0045 0.0016 0.0023 MAX. 0.0265 0.0135 0.0056 0.0085 0.0180 0.0060 0.0055 0.0020 0.0027 MIN. 0.6480 0.3180 0.1170 0.1910 0.4320 0.1270 0.1140 0.0406 0.0584 MM MAX. 0.6730 0.3430 0.1420 0.2160 0.4570 0.1520 0.1400 0.0508 0.0686 A G E F H Spice Model Parameters (Per Junction) IS A 3.2 x10-13 RS 7 1 N TT Sec 0 CJ0 pF 0.025 CP pF 0.02 0.50 M EG eV 1.42 VJ V 0.85 BV V 4 IBV A 1 x 10-5 Copyright 2008 Rev.: 2009-01-19 Microsemi Microwave Products Page 2 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 |
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